Dynamic tensor properties of silicon with deep impurity levels

Odiljon Mamatkarimov, Ulugbek Tuychiev, Ikromjon Tursunov, Rustamjon Khamidov

doi:10.14331/ijfps.2011.330010

IJFPS · Final journal article

Dynamic tensor properties of silicon with deep impurity levels

Author(s): Odiljon Mamatkarimov, Ulugbek Tuychiev, Ikromjon Tursunov, Rustamjon Khamidov

Journal: International Journal of Fundamental Physical Sciences Year: 2011 Volume: 1 Issue: 2 Pages: 39-41 ISSN: 2231-8186

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Abstract

The dynamical tensoproperties of simples Si , Si , Si and Si at temperatures Т=293К and Т=273К are investigated. The strongly increasing of dynamical tensosensitivity these specified simples at speed of change of pressure P\t >108 Pa/s in comparison with their statistical tensosensitivities is shown.

Keywords

Simple PropertiesTensor

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